Affiliation:
1. IMM-CNR
2. ST-Microelectronics
3. Institute of Microelectronics and Microsystems
Abstract
The effect of varying growth rate on the formation of defects in homo-epitaxially grown cubic silicon carbide (3C-SiC) is studied. Three growth rates are considered (30, 60 and 90 μm/hr) demonstrating that as the growth rate increases the density of point defects, as demonstrated by photo- luminescence, and stacking faults (SFs), as measured by a KOH etching procedure, increase. Scanning transmission electron microscopy images demonstrate generation, annihilation and closure of SFs as a function film thickness. High resolution X-ray diffraction is used to uncover the higher quality of homo-epitaxial with respect hetero-epitaxial films through the examination of the sample mosaicity and SF density.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. F. La Via, A. Severino, R. Anzalone, C. Bongiorno, G. Litrico, M. Mauceri, M. Schoeler, P. Schuh and P. Wellmann, Mater. Sci. Semicond. Process. 78 (2018) 57.
2. W. E. Nelson, F. A. Halden and A. Rosengreen, J. Appl. Phys. 37 (1966) 333.
3. H. Nagasawa, R. Gurunathan and M. Suemitsu, Mater. Sci. Forum 821 (2015) 108.
4. H. Nagasawa, K. Yagi, T. Kawahara and N. Hatta, Chem. Vap. Deposition 12 (2006) 502.
5. G. Ferro, Crit. Rev. Solid State Mater. Sci. 40 (2015) 56.
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献