Performance and Reliability Requirements for the Application of SiC Power MOSFET in Electrified Vehicle Drive Systems

Author:

Su Ming1,Chen Ching Chi1

Affiliation:

1. Ford Motor Company

Abstract

In the past 20 years, SiC has gone through rapid development as a next-generation power semiconductor and the automotive market is considered one of its key potential application areas. Recently SiC power MOSFETs became commercially available from multiple manufacturers, attracting significant interest in the automotive industry for their benefits in the electric drivetrain system, including higher energy efficiency and opportunities of component weight and size reduction. Optimistic prediction of technology adoption in hybrid electric vehicles (HEV) also helped create a momentum for semiconductor suppliers to engage in the demonstration of SiC power modules for the traction inverter application. However, the performance expectations and reliability requirements of SiC-based power control units remain challenging for the cost-sensitive market. This paper will discuss the status and outlook of electrified powertrain systems, and outline the requirements for wide implementation of SiC power MOSFETs.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference2 articles.

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analysis and Optimization of LC Filter Components for TCM-based Zero Voltage Switching Two-Level Three-Phase Inverters for Electric Vehicle Drive Systems;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

2. Investigation of Solder Void Improvement on Automotive Parts;2022 IEEE 39th International Electronics Manufacturing Technology Conference (IEMT);2022-10-19

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