Major Carrier Element Concentrations in SiC Powder and Bulk Crystal

Abstract

Boron, aluminum, and nitrogen are major and critical elements in silicon carbide. The concentrations of these elements influence the electrical properties of silicon carbide and also the generation of defects. Purification was executed in the powder manufacturing process. High purity powder was used to grow the crystal, which was then sliced into wafers in this work. Secondary ion mass spectroscopy (SIMS) and glow discharge mass spectrometry (GDMS) were used to measure boron, aluminum, and nitrogen concentrations in wafer and powder to compare the concentration difference. The concentration of the elements varies depending on the element’s physical property. Transfer coefficient is defined as the ratio of element concentration in wafer to powder, which is interesting to realize the element behavior in PVT process and studied in this work.