C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput

Abstract

C-face epitaxial growth of 4H-SiC was investigated considering the use as drift layers of high blocking voltage SiC power MOSFETs, such as 3.3 kV, using a multiple-wafer epitaxy system. As high as 50.9 μm/h was achieved as the growth rate while maintaining specular surface within quasi-150 mm-diameter wafers. Also, it has been found that the background carrier concentration could be lowered enough to control the desiredn-type doping concentration of nitrogen. In addition, high-throughput has been confirmed by comparing the current data with the recent results reported.