Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC-Reference-Cited by-同舟云学术

Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC

Published:2014-02 Issue: Volume:778-780 Page:836-840
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Salemi Arash¹^ORCID,Buono Benedetto²,Hallén Anders¹,ul Hassan Jawad³,Bergman Peder³,Zetterling Carl Mikael¹,Östling Mikael¹

Affiliation:

1. KTH Royal Institute of Technology

2. Fairchild Semiconductor

3. Linköping University

Abstract

10 kV PiN diodes using on-axis 4H-SiC were designed, fabricated, and measured. A lifetime enhancement procedure was done by carbon implantation followed by high temperature annealing to increase lifetime to above 2 μs. The device simulation software Sentaurus TCAD has been used in order to optimize the diode. All fabricated diodes are fully functional and have a VFof 3.3 V at 100 A/cm2at 25°C, which was decreased to 3.0 V at 300°C.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.836.pdf

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