Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer-Reference-Cited by-同舟云学术

Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer

Published:2014-02 Issue: Volume:778-780 Page:222-225
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Ishida Yuuki¹,Yoshida Sadafumi¹

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST)

Abstract

Trapezoid-shape (T-S) defects on epilayer surfaces, which include two kinds of the giant step bunching (GSB), are one of killer defects for MOSFETs. We have investigated the generation mechanism of the two GSBs using "step kinetics simulator" we developed. The simulator has reproduced the behavior of the GSBs. Based on results from the simulation, we have discussed the generation mechanism of the two GSBs.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.222.pdf

Reference9 articles.

1. T. Hosoi, K. Konzono, Y. Uenishi, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe: Material Science Forum Vol. 679-680 (2011), p.342.

2. J. Sameshima, O. Ishiyama, Atsushi Shimozato, K. Tamura, H. Oshima, T. Yamashita, T. Tanaka, N. Sugiyama, H. Sako, J. Senzaki, H. Matsuhata, M. Kitabatake: Material Science Forum Vol. 740-742 (2013), p.745.

3. T. Yamashita, H. Matsuhata, Y. Miyasaka, K. Momose, T. Sato and M. Kitabatake: Origin Analyses of Trapezoid-Shape Defects in 4-deg. -off　4H-SiC Epitaxial Wafers by Synchrotron X-ray Topograph, in: present proceedings.

4. O. Ishiyama, K. Yamada, H. Sako, K. Tamura, M. Kitabatake, J. Senzaki and H. Matsuhata: submitted to Jpn. J. Appl. Phys.

5. Y. Ishida and S. Yoshida: Simulation studies on giant step bunching in 4H-SiC epitaxial growth: Cluster effect, in: present proceedings.

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