Affiliation:
1. KTH Royal Institute of Technology
Abstract
Non ion-implantation mesa etched 4H-SiC BJT with three-zone JTE of optimized lengths and doses (descending sequences) has been simulated. This design presents an efficient electric field distribution along the device. The device area has been optimized and considerably reduced. As a result of this comprehensive optimization, a high breakdown voltage and high current gain have been achieved; meanwhile the device area with a constant emitter and base contact area has been reduced by about 30%.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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