A Comprehensive Study on the Geometrical Effects in High-Power 4H–SiC BJTs-Reference-Cited by-同舟云学术

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A Comprehensive Study on the Geometrical Effects in High-Power 4H–SiC BJTs

Published:2017-03 Issue:3 Volume:64 Page:882-887
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Salemi Arash^ORCID,Elahipanah Hossein^ORCID,Zetterling Carl-Mikael^ORCID,Ostling Mikael

Funder

Project STANDUP

Swedish Energy Agency

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7862872/07765069.pdf?arnumber=7765069

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reactive ion etching of 4H-SiC with BCl₃ plasma;PRZ ELEKTROTECHNICZN;2021

2. Impacts of Finger Numbers on ON-State Characteristics in Multifinger SiC BJTs With Low Base Spreading Resistance;IEEE Transactions on Electron Devices;2018-07

3. 15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain;IEEE Electron Device Letters;2018-01

4. Geometrical effects in JTE rings termination for 4H-SiC medium-voltage devices;Semiconductor Science and Technology;2017-11-17

5. 500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits;IEEE Electron Device Letters;2017-10

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