A Comprehensive Study on the Geometrical Effects in High-Power 4H–SiC BJTs
Author:
Funder
Project STANDUP
Swedish Energy Agency
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7862872/07765069.pdf?arnumber=7765069
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Reactive ion etching of 4H-SiC with BCl3 plasma;PRZ ELEKTROTECHNICZN;2021
2. Impacts of Finger Numbers on ON-State Characteristics in Multifinger SiC BJTs With Low Base Spreading Resistance;IEEE Transactions on Electron Devices;2018-07
3. 15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain;IEEE Electron Device Letters;2018-01
4. Geometrical effects in JTE rings termination for 4H-SiC medium-voltage devices;Semiconductor Science and Technology;2017-11-17
5. 500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits;IEEE Electron Device Letters;2017-10
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