Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC
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Published:2012-05
Issue:
Volume:717-720
Page:327-330
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Wang Huan Huan1, Byrapa Sha Yan1, Wu F.1, Raghothamachar Balaji1, Dudley Michael1, Sanchez Edward K.2, Hansen Darren M.2, Drachev Roman2, Mueller Stephan G.2, Loboda Mark J.2
Affiliation:
1. Stony Brook University 2. Dow Corning Compound Semiconductor Solutions
Abstract
In this paper, we report on the synchrotron white beam topographic (SWBXT) observation of “hopping” Frank-Read sources in 4H-SiC. A detailed mechanism for this process is presented which involves threading edge dislocations experiencing a double deflection process involving overgrowth by a macrostep (MP) followed by impingement of that macrostep against a step moving in the opposite direction. These processes enable the single-ended Frank-Read sources created by the pinning of the deflected basal plane dislocation segments at the less mobile threading edge dislocation segments to “hop” from one slip plane to other parallel slip planes. We also report on the nucleation of 1/3< >{ } prismatic dislocation half-loops at the hollow cores of micropipes and their glide under thermal shear stress.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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