Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications

Abstract

We present new reliability results on the Cree, Inc., 4H-SiC, DMOSFET devices. The Cree DMOSFETs were developed to meet the demand of next-generation, high-frequency power switching applications, such as: dc-ac inversion, dc-dc conversion, and ac-dc rectification, with continually improving energy efficiency. The Cree Generation 2 DMOSFET process technology is now commercially available with 1200 V and 1700 V ratings. We have performed intrinsic reliability studies to ensure excellent wear-out performance and long field lifetime of the products. We have also performed large sample size qualification reliability acceptance tests to ensure the quality of the manufacturing and packaging processes. These comprehensive reliability studies establish new benchmarks for wide bandgap transistors and demonstrate that Crees MOSFETs meet or exceed all industrial reliability requirements. This achievement facilitates broad market adoption of this disruptive power switch technology.