Affiliation:
1. Kyushu Sangyo University
Abstract
Gate oxide integrity (GOI) are the most important concern in automotive applications of SiC-metal-oxide-semiconductor field-effect transistors (MOSFETs). As well as for the so-called B-mode defect density reduction, the time-dependent dielectric breakdown (TDDB) mechanism including the B-mode should be clarified in comparison to Si-MOSFETs. We have reported an anomalous behavior in the form of a continuous increase in the gate current during a Fowler-Nordheim stress test of commercially available SiC-MOSFETs, which we attributed to hole trapping near the SiO2/SiC interface. In this paper, the impact of this phenomenon on the TDDB lifetime is investigated, and the effects of AC on the TDDB lifetime enhancement in SiC-MOSFET under gate-switching operations (1 kHz and 100 kHz, at room temperature) are reported.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Information on https://www.jreast.co.jp/e/development/theme/energy/energy02.html, JR East Japan Railway Company.
2. J. Senzaki, S. Hayashi, Y. Yonezawa, and H. Okumura, in Proc. IEEE Int. Rel. Phys. Symp., 2B.3.1 (2018).
3. K. P. Cheung, in Proc. IEEE Int. Rel. Phys. Symp., 2B.3.1 (2018).
4. K. Yamabe and K. Taniguchi, IEEE Trans. Electron Devices 32, 423 (1985).
5. N. Suzumura, M. Ogasawara, K. Makabe, T. Kamoshima, T. Ouchi, T. Furusawa, and E. Murakami, Microelectron. Eng., 106, 200 (2013).
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献