Comprehensive TDDB lifetime prediction methodology for intrinsic and extrinsic failures in Cu interconnect dielectrics-Reference-Cited by-同舟云学术

Comprehensive TDDB lifetime prediction methodology for intrinsic and extrinsic failures in Cu interconnect dielectrics

Published:2013-06 Issue: Volume:106 Page:200-204
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Suzumura N.,Ogasawara M.,Makabe K.,Kamoshima T.,Ouchi T.,Furusawa T.,Murakami E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. N. Suzumura, S. Yamamoto, D. Kodama, K. Makabe, J. Komori, E. Murakami, S. Maegawa, K. Kubota, in: Proceedings of the IEEE International Reliability Physics Symposium, 2006, pp. 484–489.

2. F. Chen, O. Bravo, K. Chanda, P. McLaughlin, T. Sullivan, J. Gill, J. Lloyd, R. Kontra, J. Aitken, in: Proceedings of the IEEE International Reliability Physics Symposium, 2006, pp. 46–53.

3. G.S. Haase, E.T. Ogawa, J.W. McPherson, in: Proceedings of the IEEE International Reliability Physics Symposium, 2005, pp. 466–473.

4. Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics

5. H. Miyazaki, D. Kodama, N. Suzumura, in: Proceedings of the IEEE International Reliability Physics Symposium, 2008, pp. 160–167.

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