Abstract
95% Al2O3 ceramics and Si <100> crystal were implanted by Ti ion in a MEVVA implanter. The influence of implantation parameters was studied by varying ion fluence. The samples were implanted by 80 keV Ti ion with fluences from 1 x1015 to 1 x 1018 ions/cm2, respectively. The samples were investigated by SEM, SAM, and four-probe measurement. Differentmorphologies were observed on the surfaces of the samples due to irradiation damage, and clearly related to implantation parameters. XRD spectra confirm formation of titanium silicides on the surfaces of Si samples with ion fluences equal to or high than 1x1015 ions/cm2. The experimental results suggest that it is possible to synthesise titanium silicides by using a MEVVA implanter.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Reference7 articles.
1. T. LaGrange and R. Gotthardt: Journal de Physique IV Vol. 115 (2004), p.47.
2. M. Yoshihara, S. Taniguchi and K. Fujita: J. of the Japan Institute of Metals Vol. 68 (7) (2004), p.468.
3. J.Z. Zhang, K. Tao, X.S. Yan et al.: Supplementary Issue, Chinese Journal of Materials Research Vol. 1 (1994), p.55.
4. J.Z. Zhang, X.Y. Ye, J. Chang and S. Bernard: Materials Letters Vol. 32 (1997), p.121.
5. K.L. Chang, S.C. Chung, S. Han et al.: Journal of Materials Research Vol 19 (8) (2004), p.2448.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献