Improvement of the Reverse Characteristics of Ti/4H-SiC Schottky Barrier Diodes by Thermal Treatments-Reference-Cited by-同舟云学术

Improvement of the Reverse Characteristics of Ti/4H-SiC Schottky Barrier Diodes by Thermal Treatments

Published:2007-06 Issue: Volume:124-126 Page:105-108
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Kim Dae Hwan¹,Lee Jong Ho¹,Moon Jeong Hyun¹,Oh Myong Suk¹,Song Ho Keun¹,Yim Jeong Hyuk¹,Lee Jae Bin²,Kim Hyeong Joon¹

Affiliation:

1. Seoul National University

2. Korea Sangshin Electronic Co., Ltd.

Abstract

Ti/4H-SiC Schottky barrier diodes were fabricated under 500, 750, 1000 °C thermal treatment conditions. After the heat treatment at 750 °C, formation of TiC(111) and Ti5Si3(210) phases was confirmed by XRD analysis. Formation of Ti carbide and silicide phase increased breakdown voltage VB from 545 V to 830 V. An improvement of breakdown voltage (VB) was observed in case of the thermal treatment in nitrogen ambient at 750 °C for 2 min. Ideality factor (n), specific on resistance (Ron), and Schottky barrier height (Φb) were 1.04, 2.7 m-cm2, 1.33 eV respectively.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.124-126.105.pdf

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