Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance-Reference-Cited by-同舟云学术

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Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance

Published:2002-04 Issue: Volume:389-393 Page:1383-1386
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Na Hoon Joo¹,Kim Hyeong Joon¹,Adachi Kazuhiro²,Kiritani Norihiko³,Tanimoto Satoshi⁴,Okushi Hideyo⁵,Arai Kazuo²

Affiliation:

1. Seoul National University

2. National Institute of Advanced Industrial Science and Technology (AIST)

3. UPR Ultra-Low-Loss Power Device Technology Research Body

4. Nissan Motor Co., Ltd.

5. National Institute of Advanced Industrial Science and Technology AIST, PERC

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.389-393.1383.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of the Reverse Characteristics of Ti/4H-SiC Schottky Barrier Diodes by Thermal Treatments;Solid State Phenomena;2007-06

2. Single Contact-Material MESFETs on 4H-SiC;Materials Science Forum;2004-06

3. Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation;Materials Science Forum;2004-06

4. Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments;Materials Science Forum;2004-06

5. High-quality schottky and ohmic contacts in planar 4H-SiC metal semiconductor field-effect transistors and device performance;Journal of Electronic Materials;2004-02

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