Affiliation:
1. University of Erlangen-Nürnberg
2. Freiberger Compound Materials GmbH
Abstract
A defocused Laue diffractometer setup operating with the white beam of a high energy X-ray tube has been used for a topographic visualization of structural defects in semiconductor wafers. The laboratory white beam X-ray topograph of a Czochralski Si wafer with oxygen precipitates grown in an annealing process is compared to a μPCD image. Further, the dislocation network in a VGF GaAs wafer is studied under thermal annealing up to 1140°C and the in-situ capability of the setup is demonstrated.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Cited by
2 articles.
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