Affiliation:
1. University of Quensland
2. The University of Queensland
Abstract
Low dimensional nanostructures, e.g. nanowires, self-assembled through heteroepitaxy, present a variety of crystallographic features that do not always follow conventional V-W or S-K growth mode. Applying Δg parallelism rules and edge-to-edge matching (E2EM) model in β-DySi2/Si and CoSi2/Si systems provides a better understanding of the natural preference of the interface orientation and the orientation relationship (OR) during heteroepitaxial growth. This may help improving the quality of nanowires through optimizing the substrate orientation.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Reference27 articles.
1. J.E. Ayers: Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization (Taylor & Francis Group, New York 2007).
2. M. Volmer and A. Weber: Z. Phys. Chem. Vol. 119 (1926), p.277.
3. I.N. Stranski and Von L. Krastanow: Akad. Wiss. Lit. Mainz Math. -Natur. Kl. IIb Vol. 146 (1939), p.797.
4. J. H. Claassen, S. A. Wolf, S.B. Qadri, et al: J. Cryst. Growth Vol. 81 (1987), p.557.
5. M. Shigeta, Y. Fujii, A. Ogura, et al: J. Cryst. Growth Vol. 93 (1988), p.766.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献