Inclined-epitaxy of β-SiC on Si(n11) substrates (n = 3, 4, 5, 6) by chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
2. Epitaxial growth of β-SiC single crystals by successive two-step CVD
3. High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition
4. 3C‐SiCp‐njunction diodes
5. Experimental 3C-SiC MOSFET
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