Affiliation:
1. Advanced Technology Materials Incorporation
2. Intermolecular Incorporation
Abstract
Titanium nitride (TiN) is widely used as a hard mask film protecting the inter-level dielectric (ILD) before metal or plating seed layer deposition steps. It is common practice to use a wet etch in order to remove residues formed during the ILD dry-etch step, and at the same time to remove some or all of the exposed TiN. From its thermochemical properties, it might be predicted that wet etching of TiN should be easy, since it is quite unstable with respect to both plain and oxidative hydrolysis. For example, in acidic solutions at 25°C [1, :
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
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