Affiliation:
1. Beijing Institute of Technology
Abstract
In this study, performances of double delta-doped AlGaAs/InGaAspseudomorphic high electron mobility transistors are investigated. Simulation results demonstrate good performance for this structure. Form simulation, the structure demonstrates a maximum current gain cutoff frequency of 145GHz for 100nm gate length, a peak extrinsic transconductance of 526mS/mm, and a maximum saturation current density of 350mA/mm.
Publisher
Trans Tech Publications, Ltd.
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