Modification of Silicon Oxide by High Energy Electron Beam

Author:

Kolesnikova E.V.1,Sitnikova Alla A.2,Sokolov V.I.2,Zamoryanskaya M.V.2

Affiliation:

1. A.F. Ioffe Physicotechnical Institute RAS

2. Russian Academy of Sciences

Abstract

During interaction between thin film SiO2 and electron beam with high power density, amorphous silicon dioxide modifies. Silicon nanoclusters are formed in radiated area. Result of this interaction is formation of Si/SiO2 nanocomposite. We studied modified SiO2 by TEM, microdiffraction and cathodoluminescence.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Graphene-like film CVD on e-beam exposed SiO2/Si by the pyrolysis of different oxygen-containing precursors;Fullerenes, Nanotubes and Carbon Nanostructures;2020-01-06

2. Changes in composite nc-Si-SiO2 thin films caused by 20 MeV electron irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-11

3. Atоmiс Force Microscopy of Graphene-Like Films Deposited onto Preirradiated SiO2/Si;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2019-09

4. Influence of 20 MeV electron irradiation on the optical properties and phase composition of SiOx thin films;Journal of Applied Physics;2018-05-21

5. Nanoscale scanning electron microscopy based graphitization in tetrahedral amorphous carbon thin films;Carbon;2016-10

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