Internal Dissolution of Buried Oxide in SOI Wafers-Reference-Cited by-同舟云学术

Internal Dissolution of Buried Oxide in SOI Wafers

Published:2007-10 Issue: Volume:131-133 Page:113-118
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Kononchuk Oleg¹,Boedt Francois²,Allibert Frederic²

Affiliation:

1. SOITEC

2. SOITEC SA

Abstract

High temperature anneal of SOI wafers in oxygen-free atmosphere results in internal buried oxide dissolution and top Si layer etching. Dissolution rate is determined by interstitial oxygen diffusion through the top Si layer and evaporation from the top Si surface in the form of SiO. It has been observed that kinetics of the process follows linear-parabolic law. Simple thermodynamic model is proposed, which explains observed dependences on temperature and top Si layer thickness.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.131-133.113.pdf

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