Affiliation:
1. Universität Erlangen-Nürnberg
Abstract
The build-up of strain fields caused by the precipitation of oxygen in Czochralski-silicon during annealing up to 1200°C and for process times up to 70 hours has been observed in real time by high energy x-ray diffraction. Five different processes are distinguished in the temperature evolution of the intensity and of the rocking width of the silicon 220-reflection. These features are attributed to different precipitation mechanisms. A fit to part of the data with a diffusion limited precipitation model leads to an activation energy for oxygen diffusion in silicon of 2.2 eV in the temperature range from 700°C to 950°C.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Reference7 articles.
1. W. Zulehner, oxygen related defects and microdefects, in Landolt Börnstein, Vol 22b, new series, Springer Verlag (1989).
2. K. -D. Liss, A. Magerl, J. R. Schneider and W. Zulehner, In situ neutron diffraction study of lattice deformation during oxygen precipitation in silicon, J. Appl. Phys. 70, 1276 (1991).
3. C. Seitz, M. Weisser, M. Gomm, R. Hock und A. Magerl: A high-energy triple-axis X-ray diffractometer for the study of the structure of bulk crystals, J. Appl. Cryst., 37: 901-910, (2004).
4. M. Weisser, PhD. thesis Aufbau eines neuartigen Hochenergie-Röntgendiffraktometers und Untersuchungen zur Realstruktur massiver Einkristalle, University Erlangen-Nürnberg (2004).
5. R.C. Newman, Oxygen diffusion and precipitation in Czochralski silicon, J. Phys: Condens. Matter 12 (2000) R335-R365.
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献