Solid-Phase Crystallization of a-Si:H by RTA

Author:

Jin Rui Min1,Li Ding Zhen1,Chen Lan Li1,Han Xiang Ju2,Lu Jing Xiao3

Affiliation:

1. Nanyang Institute of Technology

2. Ancai Hi-Tech Co., Ltd.

3. Zhengzhou University

Abstract

Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by rapid thermal annealing (RTA) at the same temperature for different time. From X-ray diffraction (XRD) and scanning electronic microscope (SEM), it is found that the grain size is biggest crystallized at 720°C for 8 min, an average grain size of 28nm or so is obtained. The thin film is smoothly and perfect structure.

Publisher

Trans Tech Publications, Ltd.

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