Affiliation:
1. Nanyang Institute of Technology
2. Ancai Hi-Tech Co., Ltd.
3. Zhengzhou University
Abstract
Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by rapid thermal annealing (RTA) at the same temperature for different time. From X-ray diffraction (XRD) and scanning electronic microscope (SEM), it is found that the grain size is biggest crystallized at 720°C for 8 min, an average grain size of 28nm or so is obtained. The thin film is smoothly and perfect structure.
Publisher
Trans Tech Publications, Ltd.
Cited by
2 articles.
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