Growth mechanism of microcrystalline silicon at high pressure conditions-Reference-Cited by-同舟云学术

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Growth mechanism of microcrystalline silicon at high pressure conditions

Published:2004-06 Issue: Volume:338-340 Page:56-60
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Rath J.K.,Franken R.H.J.,Gordijn A.,Schropp R.E.I.,Goedheer W.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. High Rate Deposition of Microcrystalline Silicon Using Conventional Plasma-Enhanced Chemical Vapor Deposition

2. An approach to device grade amorphous and microcrystalline silicon thin films fabricated at higher deposition rates

3. Low temperature polycrystalline silicon: a review on deposition, physical properties and solar cell applications

4. A self-consistent fluid model for radio-frequency discharges in SiH4–H2 compared to experiments

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