Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing-Reference-Cited by-同舟云学术

Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing

Published:2003-09 Issue: Volume:95-96 Page:571-576
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Frantskevich A.V.¹,Saad Anis M.²,Mazanik A.V.³,Fedotov A.K.³,Rau E.I.⁴,Chigir S.V.

Affiliation:

1. Belarusian National Technical University

2. Al-Balqa Applied University

3. Belarusian State University

4. M.V. Lomonosov Moscow State University

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.95-96.571.pdf

Reference3 articles.

1. and 50 % from their common number [13]. Also it should be noted that positions of the peaks for oxygen content curves versus sputtering time (i. e. depth) for these two samples A2 and B2 are not coincident. This fact can be due to three.

2. 5 10 15 20 25 30.

3. [3] [10] [4] [10] [5] (a) Si O.

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