Surface modification and oxidation of Si wafers after low energy plasma treatment in hydrogen, helium and argon-Reference-Cited by-同舟云学术

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Surface modification and oxidation of Si wafers after low energy plasma treatment in hydrogen, helium and argon

Published:2013-12 Issue:6 Volume:16 Page:1377-1381
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Turishchev S.Yu.,Terekhov V.A.,Parinova E.V.,Korolik O.V.,Mazanik A.V.,Fedotov A.K.

Funder

Federal Targeted Program “Scientific and Scientific-Educational Personnel of the Innovative Russia”

National Science Foundation under award

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing

2. Etching and hydrogen diffusion mechanisms during a hydrogen plasma treatment of silicon thin films

3. Formation of luminescent structures on Cz-silicon by hydrogen plasma treatments and oxidation

4. Sampling depth of total electron and fluorescence measurements in Si L- and K-edge absorption spectroscopy

5. Ultrasoft X-Ray Spectroscopy;Zimkina,1971

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