Measurements and Modeling of Zinc Diffusion Profiles in Gallium Phosphide
Author:
Affiliation:
1. Westfälische Wilhelms-Universität Münster
2. Christian Albrechts University Kiel
3. Chalmers University of Technology
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Radiation
Link
https://www.scientific.net/DDF.194-199.723.pdf
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Diffusion and Defect Phenomena in III-V Semiconductors and their Investigation by Transmission Electron Microscopy;Diffusion Foundations;2018-07
2. Diffusion in Semiconductors;Springer Handbook of Electronic and Photonic Materials;2017
3. Diffusion in Semiconductors;Springer Handbook of Electronic and Photonic Materials;2006
4. Dopant diffusion in GaP and related compounds: recent results and new considerations;Materials Science in Semiconductor Processing;2003-10
5. Diffusion of zinc in gallium phosphide under defect-free phosphorus-rich conditions;Physica B: Condensed Matter;2001-12
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