Dopant diffusion in GaP and related compounds: recent results and new considerations
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference22 articles.
1. Hybrid Impurity and Self-Diffusion in GaAs and Related Compounds: Recent Progress
2. Diffusion of Nitrogen from a Buried Doping Layer in Gallium Arsenide Revealing the Prominent Role of As Interstitials
3. Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers
4. Determination of arsenic diffusion parameters by sulfur indiffusion in gallium arsenide
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2. Diffusion mechanism of Zn in InP and GaP from first principles;Physical Review B;2008-03-04
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