A new Insight into the Electromigration Behavior of Copper Interconnects: The Roles of Grain Boundary and Surface Diffusion-Reference-Cited by-同舟云学术

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A new Insight into the Electromigration Behavior of Copper Interconnects: The Roles of Grain Boundary and Surface Diffusion

Published:1997-01 Issue: Volume:143-147 Page:1673-1678
ISSN:1662-9507
Container-title:Defect and Diffusion Forum
language:
Short-container-title:DDF

Author:

Glickman Evgeny E.¹,Nathan M.¹

Affiliation:

1. Tel-Aviv University

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Radiation

Link

https://www.scientific.net/DDF.143-147.1673.pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hillock formation on copper at room temperature by cleaning in ammonia vapor;Applied Physics Letters;2001-10-22

2. Surface electromigration in copper interconnects;Microelectronics Reliability;2000-01

3. Surface electromigration in copper interconnects;1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296)

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