TiSiN Films by Reactive RF Magnetron Co-Sputtering for Ultra-Low-Current Phase Change Memory

Abstract

Our simulation reveals that the programming current of phase change memory (PCM) is expected to dramatically reduce to tens of μA with the help of a heating layer. TiSiN films by reactive RF magnetron co-sputtering are investigated for application to the heating layer of the ultra-low-current PCM. The resistivity of TiSiN films is well controlled from around to with increasing N2partial flow rate to 10%. The effect of annealing on the TiSiN films exhibits the relative stability of the resistivity of the films. This implies that these TiSiN films can be used as a universal heating layer for the intensively researched phase change materials.