Scanning electron microscope for in situ study of crystallization of Ge2Sb2Te5 in phase-change memory
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2818804
Reference17 articles.
1. Reversible Electrical Switching Phenomena in Disordered Structures
2. Finite Element Analysis of Dependence of Programming Characteristics of Phase-Change Memory on Material Properties of Chalcogenides
3. Phase change memories: State-of-the-art, challenges and perspectives
4. Lateral SbTeN based multi-layer phase change memory for multi-state storage
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1. Reduction of Rocksalt Phase in Ag -Doped Ge2Sb2Te5 : A Potential Material for Reversible Near-Infrared Window;Physical Review Applied;2018-11-30
2. High transmittance contrast in amorphous to hexagonal phase of Ge2Sb2Te5: Reversible NIR-window;Applied Physics Letters;2017-12-25
3. Ultra-Multilevel-Storage Phase Change Memory;Advanced Materials Research;2014-06
4. Effect of a separate heater structure for crystallisation to enable multilevel storage phase-change memory;International Journal of Nanotechnology;2014
5. Electron Beam Lithography for Fabrication of Nanophase-Change Memory;Applied Mechanics and Materials;2013-12
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