Finite Element Analysis of Dependence of Programming Characteristics of Phase-Change Memory on Material Properties of Chalcogenides
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 31 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Modeling Reset, Set, and Read Operations in Nanoscale Ge2Sb2Te5 Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties;physica status solidi (RRL) – Rapid Research Letters;2023-02-11
2. Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*;Chinese Physics B;2021-05-01
3. C–N-codoped Sb2Te3 chalcogenides for reducing writing current of phase-change devices;Applied Physics Letters;2020-10-12
4. Nitrogen Doping of Hexagonal and Cubic Ge2Sb2Te5 Nanocrystals: An Ab Initio Study;International Journal of Nanoscience;2018-10-22
5. The improvement of nitrogen doped Ge 2 Sb 2 Te 5 on the phase change memory resistance distributions;Solid-State Electronics;2016-02
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