Affiliation:
1. Dalian University of Technology
2. Qingdao Longsun Silicon Technogy Ltd
Abstract
This article provides a method to determinate boron (B) impurity in silicon by inductively coupled plasma emission spectrometry (ICP-AES), in which the element spectral and analytical parameters were optimized. Three factors that influence testing results were discussed, including the amount of mannitol (C6H14O6) addition, concentration of nitric acid (HNO3) and evaporated temperature. As a result, the experimental parameters and conditions were optimized. The method of the detection limit, recovery and precision were all awarded with satisfactory results.
Publisher
Trans Tech Publications, Ltd.
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