Formation of Ordered Si Nanowires Arrays on Si Substrate-Reference-Cited by-同舟云学术

Formation of Ordered Si Nanowires Arrays on Si Substrate

Published:2013-11 Issue: Volume:854 Page:83-88
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Evtukh A.A.¹,Druzhinin Anatoly²,Ostrovskii I.³,Kizjak A.¹,Grigoriev A.¹,Steblova O.⁴,Nichkalo S.³

Affiliation:

1. National Academy of Sciences of Ukraine

2. Lviv Polytechniс National University

3. National University “Lvivska Politechnika”

4. Taras Shevchenko National University of Kyiv

Abstract

The paper deals with investigation of silicon nanowires formation by LP CVD method on Si substrate using gold films as a mask. The average diameter of Si nanowires grown by LP CVD was about 60 nm. It was shown that using of Si-Au droplets as the mask allows to obtain vertically aligned silicon nanowires with average diameter of about 60 nm. The kinetics of radial and axial growth was investigated, the growth rates and kinetic coefficient of growth were calculated, which showed a good accordance to experimental data.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.854.83.pdf

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