Influence of Low-Temperature Annealing on the Electrical Conductivity of SiOx Films
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-019-00149-x.pdf
Reference40 articles.
1. Gavrylyuk OO, Semchuk OY, Steblova OV, Evtukh AA, Fedorenko LL, Bratus OL, Zlobin SO, Karlsteen M (2015) Influence of laser annealing on SiOx films properties. Appl Surf Sci 336:217–221. https://doi.org/10.1016/j.apsusc.2014.11.066
2. Huang R, Zhang LJ, Gao DJ, Pan Y, Qin SQ, Tang PR, Cai YM, Wang YY (2011) Resistive switching mechanism in silicon highly rich SiOx(x < 0.75) films based on silicon dangling bonds percolation model. Appl Phys A Mater Sci Process 102:927. https://doi.org/10.1063/1.4776695
3. Mehonic A, Cueff S, Wojdak M, Hudziak S, Jambois O (2012) Resistive switching in silicon suboxide films. J Appl Phys 111:074507. https://doi.org/10.1063/1.3701581
4. O.L. Bratus’, A.A. Evtukh, V.A. Ievtukh, V.G. Litovchenko, J Non-Crystal Solids, 354 (2008) https://doi.org/10.1016/j.jnoncrysol.2008.06.037 , Nanocomposite SiO2(Si) films as a medium for non-volatile memory, 354, 4281
5. AA Evtukh, OV Pylypova,·O Martyniuk, H Mimura (2018) 8, 5. https://doi.org/10.1007/s13204-018-0710-3
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