Advance of Ge/Si Quantum Dot Infrared Photodetector

Abstract

The generation of quantum dots (QDs), the advantages and disadvantages of quantum dot infrared photodetector (QDIP) are briefly reviewed. Typical techniques for fabricating ordered Ge/Si QDs, the application of Ge/Si QDIP in optical communication and thermal imaging and the structure optimization are described. Finally, the key problems for improving the properties of Ge/Si QDs and Ge/Si QDIP, future trends and prospects are discussed.