FE Based Thermal Analysis of Void Effect in IGBT Mechanical Module-Reference-Cited by-同舟云学术

FE Based Thermal Analysis of Void Effect in IGBT Mechanical Module

Published:2012-07 Issue: Volume:548 Page:415-420
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Fang Xin Yu¹,Zhang Xiao Ling¹,Gong Wei Hua¹,Zhang Jian¹

Affiliation:

1. Beijing University of Technology Beijing

Abstract

In this paper, a reasonable model under the thermal void effect of the Insulate Gate Bipolar Transistor is been built. Finite element analysis (FE) is introduced to analyze thermal characteristics of the model. The results indicate that the heat distribution of IGBT is determined of voids with different sizes, positions and the intensity. Besides, the synergy of void effect and heat coupling effect would significantly increase the temperature of the chip.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.548.415.pdf

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