Affiliation:
1. Russian Academy of Sciences
2. Georg-August-Universität Göttingen
Abstract
We show experimentally that dislocations in Si crystals can generate some unknown vacancy complexes Vxtrailin their slip planes during their motion at 600°C. Most of these “dislocation trail defects” are not electrically active but can be detected by their reaction with gold atoms during in-diffusion experiments. It was also shown that contrary to gold, the Vxtrail-complexes do not react with interstitial Ni atoms. It means that the binding energy Ebindof Vxtrailcomplexes is quite high (Ebind>2.5eV), higher than the binding energy of vacancy complexes generated during FZ-Si crystal growth. It was also shown that Ni in-diffusion results in a strong increase of electron-hole recombination at dislocations and in a strong increase of dislocation-related DLTS C-line.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Cited by
6 articles.
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