Electrical properties of dislocation trails in n-Si
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference9 articles.
1. Inhomogeneities in plastically deformed silicon single crystals. II. Deep-level transient spectroscopy investigations ofp- andn-doped silicon
2. On the real structure of monocrystalline silicon near dislocation slip planes
3. The Electrical Activity of Dislocation Slip Planes in Semiconductor Crystals
4. Contribution of the disturbed dislocation slip planes to the electrical properties of plastically deformed silicon
5. Electrical properties of dislocations and point defects in plastically deformed silicon
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2. Electron‐Beam‐Induced Current and Deep‐Level Transient Spectroscopy Study of Dislocation Trails in Au‐Doped Si;physica status solidi (a);2021-05-28
3. Concerning vacancy defects generated by moving dislocations in Si;Materials Today: Proceedings;2018
4. Spatial Distribution of the Dislocation Trails in Silicon;Solid State Phenomena;2015-10
5. Interplay of Ni and Au Atoms with Dislocations and Vacancy Defects Generated by Moving Dislocations in Si;Solid State Phenomena;2015-10
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