Simultaneous Localization of Electrons in Different Δ-Valleys in Ge/Si Quantum Dot Structures-Reference-Cited by-同舟云学术

Simultaneous Localization of Electrons in Different Δ-Valleys in Ge/Si Quantum Dot Structures

Published:2015-07 Issue: Volume:233-234 Page:415-418
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Zinovieva Aigul¹,Stepina Natalia¹,Dvurechenskii Anatoly¹,Kulik Leonid¹,Mussler Gregor²,Moers Juergen²,Grützmacher Detlev²

Affiliation:

1. SB RAS

2. Peter Gruenberg Institute, Forschungszentrum Julich and Julich-Aachen Research Alliance

Abstract

In the present work the possibility of simultaneous localization of two electrons in Δ100 and Δ001 valleys in ordered structures with Ge/Si quantum dots (QD) was verified experimentally by electron spin resonance (ESR) method. ESR spectra obtained for the ordered ten-layered QD structure in the dark shows the signal corresponding to electron localization in Si at the Ge QD base edges, in Δ100, Δ010 valleys (gzz=1.9985, gin-plane=1.999). Light illumination causes the appearance of a new ESR line (gzz=1.999) attributed to the electrons in Δ001 valley localized at the QD apexes. Observed effect is explained by enhancement of electron confienment near QD apex by Coloumb attraction to the photogenerated hole trapped in Ge QD.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.233-234.415.pdf

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