Vacancy-Related Defects in Ge Doped with Tin-Reference-Cited by-同舟云学术

Vacancy-Related Defects in Ge Doped with Tin

Published:2013-10 Issue: Volume:205-206 Page:412-416
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Khirunenko Lyudmila I.¹,Pomozov Yurii V.¹,Sosnin Mikhail G.¹,Abrosimov Nikolai V.²,Riemann Helge²

Affiliation:

1. National Academy of Sciences of Ukraine

2. Leibniz Institute for Crystal Growth

Abstract

It has been found that isolated V20 and V20 localized near tin atoms are formed in Ge doped with tin. Simultaneously with V20 annealing, the appearance of absorption spectra consisting of sharp lines was observed. The defect to which the spectra found corresponds has hydrogen-like properties. The distances between the lines in spectrum are in good agreement with those predicted by effective-mass theory. The formation of the defect found does not depend on oxygen concentration. An appearance of Fano resonance in the region of continuum was detected in addition to intracenter transitions of the defect. The defect found was identified as SnV20Ga.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.205-206.412.pdf

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