Affiliation:
1. National Institute for Materials Science
2. Meiji University
Abstract
Grain boundaries and dislocations are major crystallographic defects in multicrystalline Si materials for solar cells. Heavily dislocated grains are detrimental to the photovoltaic performance. This paper attempts to clarify the origin of inhomogeneous defect distribution in multicrystalline Si. The impacts of crystal orientation and grain boundary were investigated. The crystal orientation gives an important geometrical effect in the possibility of initiating slip in a grain when subjected to stress. The presence of grain boundary can also affect dislocation distribution depending on boundary character.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Cited by
1 articles.
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1. Basic growth and crystallographic quality of Si crystals for solar cells;Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces;2020