Direct Observations of Fe Impurities in Si with Different Fermi Levels by Mössbauer Spectroscopy-Reference-Cited by-同舟云学术

Direct Observations of Fe Impurities in Si with Different Fermi Levels by Mössbauer Spectroscopy

Published:2015-10 Issue: Volume:242 Page:205-210
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Ino Yuji¹,Tanaka Kiyotaka¹,Sakata Kazumasa¹,Yoshida Yutaka¹

Affiliation:

1. Shizuoka Institute of Science and Technology

Abstract

The charge states of Fe interstitial atoms in Si are investigated by Mössbauer spectroscopy. The spectra of 57Fe-diffused Si wafers are measured directly after the deposition at room temperature. The Fermi levels are changed by applying the external voltages to a Schottky junction, and by using different Si wafers with different dopant concentrations, providing different fractions of interstitial Feint0 and Feint+ Mössbauer components which correspond to the isomer shifts of 0.40 and 0.80 mm/s, respectively.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.242.205.pdf

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