Formation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon

Abstract

Deep level transient spectroscopy (DLTS) has been applied to study the formation of trivacancy-oxygen complexes in Si. Samples of p-type Czochralski grown (Cz) silicon, with a boron doping concentration of ~1x1015cm-3, have been irradiated at room temperature (RT) with 1.8 MeV protons to a dose of 5×1012cm-2. Two new energy levels at Ev+0.24 eV and Ev+0.11 eV (Evdenotes the valence band edge) emerge when the divacancy (V2) to divacancy-oxygen (V2O) transition takes place during post-irradiation annealing. The concentration is ~30% relative to V2(or V2O) and further, the two new levels exhibit an almost one-to-one correlation in strength. The present results strongly support that both levels are related to the same defect with a possible identification as single and double donor states of V3O.