EPR Experiments on Hydrogen-Implanted Silicon Crystals: Annealing Properties of Bond Center Hydrogen-Reference-Cited by-同舟云学术

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EPR Experiments on Hydrogen-Implanted Silicon Crystals: Annealing Properties of Bond Center Hydrogen

Published:1993-10 Issue: Volume:143-147 Page:909-914
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Bech Nielsen B.,Bonde Nielsen K.,Byberg J.R.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.143-147.909.pdf

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamics of Hydrogen in Silicon at Finite Temperatures from First Principles;physica status solidi (b);2022-03-16

2. Interaction Between Hydrogen and Vacancy Defects in Crystalline Silicon;physica status solidi (a);2018-12-11

3. Photoinduced small polarons bound to hydrogen defects in rutile TiO2;Physical Review B;2017-08-07

4. Deep Centers in Semiconductors;Materials Science and Technology;2013-02-15

5. Donor level of interstitial hydrogen in semiconductors: Deep level transient spectroscopy;Physica B: Condensed Matter;2009-12

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