High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET-Reference-Cited by-同舟云学术

High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET

Published:2020-07 Issue: Volume:1004 Page:1115-1122
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Sato Shinji¹,Kato Fumiki¹,Hozoji Hiroshi²,Sato Hiroshi¹,Yamaguchi Hiroshi¹,Harada Shinsuke¹

Affiliation:

1. National Institute of Advanced Industrial Science and Technology

2. National Institute of Advanced Industrial Science and Technology (AIST)

Abstract

In the conventional SiC-MOSFET, a PN junction diode is included between the source and drain. This P-N junction diode not only causes device degradation, but also generates a large reverse recovery surge voltage during high temperature operation. This surge voltage increases the electrical stress of the power converter, causing dielectric breakdown and control malfunction. We have developed a SBD integrated SiC-MOSFET. This MOSFET reduces the occurrence of reverse recovery surge voltage during high-temperature operation caused by inactivating the included PN junction diode. In this paper, we discuss the characteristics of the inverter composed of the developed SiC-MOSFET in high-temperature operation. As a result, the inverter using a SBD integrated SiC-MOSFET with the PN junction diode deactivated was able to reduce surge voltage at high temperature operation.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.1004.1115.pdf

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