Defects Created by Helium Implantation at Different Temperatures in Silicon
Author:
Affiliation:
1. Laboratoire de Métallurgie Physique UMR 6630, SP2MI
2. Moscow Institute for Electronic Technology
3. Institut Pprime CNRS - Université de Poitiers - ENSMA - UPR 3346
4. Delft University of Technology
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Link
https://www.scientific.net/SSP.82-84.285.pdf
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structure and luminescence of silicon irradiated by protons;Inorganic Materials: Applied Research;2014-03
2. Effect of Self-Interstitials – Nanovoids Interaction on Two-Dimensional Diffusion and Activation of Implanted B in Si;Solid State Phenomena;2005-12
3. RADIATION DEFECT ENGINEERING;International Journal of High Speed Electronics and Systems;2005-03
4. Defects Created by Multi-Energy He Implantation of Silicon at High Temperatures;Solid State Phenomena;2003-09
5. Radiation damage in He implanted silicon at high temperature using multi-energies;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-12
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