1. Kalinin, V.V., Aseyev, A.L., Gerasimenko, N.N., Obodnikov, V.I., and Stenin, S.I., The formation of defects in Si under the radiation enhanced diffusion conditions, Radiation Effects, 1980, vol. 48, pp. 13–18.
2. Eaglesham, D.J., Stolk, P.A., Grossmann, H.-J., Haynes, T.E., and Poate, J.M., Implant damage and transient enhanced diffusion in Si, Nucl. Instr. Meth. Phys. Res. B, 1995, vol. 106, pp. 191–197.
3. Pan, G.Z., Ostroumov, R.P., Ren, L.P., Lian, Y.G., and Wang, K.L., Silicon light emissions from boron implant-induced defect engineering, J. Non-Crystal. Solids, 2006, vol. 352, pp. 2506–2509.
4. Gerasimenko, N.N., Dzhamanbalin, K.B., and Medetov, N.A., Samoorganizovannye nanorazmernye struktury na poverkhnosti i v ob”eme poluprovodnikov (Self-Organized Nano-Sized Structures on the Surface and in Volume of Semiconductors), Almaty: LEM, 2002.
5. Gerasimenko, N.N., Kozlovskii, V.V., and Mikhaylov, A.N., Radiation defects as nanocrystals in bulk crystalline silicon, Proc. 25th Int. Conf. on Defects in Semiconductors (ICDS-25), St. Petersburg, 2009.