Internal Gettering in Silicon: Experimental and Theoretical Studies Based on Fast and Slow Diffusing Metals-Reference-Cited by-同舟云学术

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Internal Gettering in Silicon: Experimental and Theoretical Studies Based on Fast and Slow Diffusing Metals

Published:2001-11 Issue: Volume:82-84 Page:381-386
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Geranzani P.¹,Pagani M.¹,Pello C.¹,Borionetti G.¹

Affiliation:

1. MEMC Electronic Materials Inc.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.82-84.381.pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis;Modern Electronic Materials;2019-09-12

2. Physical Chemistry of Semiconductor Materials Processing;Physical Chemistry of Semiconductor Materials and Processes;2015-08-07

3. Effects of low-temperature annealing phosphorous gettering process on the electrical properties of multi-crystalline silicon with a low minority carrier lifetime;Acta Physica Sinica;2013

4. Detection of Nickel in Silicon by Recombination Lifetime Measurements;Solid State Phenomena;2007-10

5. Experimental and theoretical study of heterogeneous iron precipitation in silicon;Journal of Applied Physics;2007-02-15

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